Metal-Semiconductor field effect transistor (MESFETs) were fabricated on hydrogen-terminated polycrystalline diamond. Fabricated MESFETs typically showed high drain-source current (140 mA/mm) and large transconductance values (60 mS/mm), with a cut off frequency fT=10 GHz and a maximum oscillation frequency, fMAX, up to 35 GHz. These values suggest device microwave operation in the K- band and are obtained through the fabrication of devices with geometry and active region dimensions compatible with available microelectronic technologies. Devices were realized in order to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas where diamond promises the replacement of vacuum electronics: with this perspective, our group realized a first important step formulating an equivalent circuit (EQC) model.
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机译：在氢封端的多晶金刚石上制造了金属半导体场效应晶体管（MESFET）。制成的MESFET通常表现出高漏源电流（140 mA / mm）和大跨导值（60 mS / mm），截止频率f T = 10 GHz，最大振荡频率f MAX ，最高35 GHz。这些值表明器件微波在K波段工作，并且是通过制造具有与可用微电子技术兼容的几何形状和有源区尺寸的器件而获得的。为了在卫星通信和高频功率放大的微波集成电路中使用这些器件，人们实现了这些器件，钻石有望取代真空电子器件：从这个角度来看，我们小组实现了制定等效电路（EQC）模型的第一步，这是重要的一步。
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