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Modeling multiple input switching of CMOS gates in DSM technology using HDMR

机译:使用HDMR在DSM技术中对CMOS门的多路输入开关进行建模

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Continuing scaling of CMOS technology has allowed aggressive pursuant of increased clock rate in DSM chips. The ever shorter clock period has made switching times of different inputs on a logic gate ever closer to each other. The traditional method of static timing analysis assuming single input switching is no longer adequate enough to capture gate level delays accurately. Gate delay models considering multiple input switching are needed for DSM chips. We propose a new method of systematically modeling gate delays using the high dimensional model representation (HDMR) method. The proposed method models gate delays with respect to the relative signal arrival times (RSAT) of its inputs. The systematic nature of the proposed algorithm allows gate delay characterization with more inputs switching close to each other. This paper will show, for the first time, gate delay models of up to 5 inputs. In addition, the proposed model is extended to allow the input signal slope and process variations to be taken into account for statistical static timing analysis. Our results show that the proposed HDMR model gives an error between 2.2% to 12.9% for a variety of static and dynamic logic gates as compared to SPICE results, depending on the number of inputs involved in switching.
机译:CMOS技术的不断扩展已使DSM芯片的时钟速率不断提高。越来越短的时钟周期使逻辑门上不同输入的切换时间越来越近。假设单个输入开关的传统静态时序分析方法不再足以准确地捕获栅极电平延迟。 DSM芯片需要考虑多输入切换的门延迟模型。我们提出了一种使用高维模型表示(HDMR)方法对门延迟进行系统建模的新方法。所提出的方法相对于其输入的相对信号到达时间(RSAT)对门控延迟进行建模。所提出算法的系统性质允许在更多输入彼此接近的情况下进行门延迟表征。本文将首次展示多达5个输入的门控延迟模型。另外,对所提出的模型进行了扩展,以允许在统计静态时序分析中考虑输入信号的斜率和过程变化。我们的结果表明,与SPICE结果相比,所提出的HDMR模型对于各种静态和动态逻辑门的误差在2.2%至12.9%之间,具体取决于开关涉及的输入数量。

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