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Characteristics of thin film piezoelectric ultrasonic transducer array by chemical solution deposition

机译:化学溶液沉积薄膜压电超声换能器阵列的特性

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In this paper, thin film piezoelectric ultrasonic transducers with a two electrode design and various different membrane sizes were manufactured and characterized. The transducers were fabricated on a silicon wafer by chemical solution deposition (CSD) where PZT was deposited with a total thickness of ~2 ¿m. Afterwards, cavities were wet etched underneath the piezoelectric layer creating bending membranes with a total thickness of ~13 ¿m and cavity sizes from 0.056 mm2 to 0.181 mm2. Then the transducers were poled and their electromechanical properties were measured with laser vibrometer. The membranes resonance frequencies and quality factors were measured at ~780-2000 kHz and 70-135, respectively, and effective d33 coefficients from 100-290 nm/V.
机译:在本文中,制造并表征了具有两个电极设计和各种不同膜尺寸的薄膜压电超声换能器。换能器是通过化学溶液沉积(CSD)在硅晶片上制造的,其中PZT的沉积总厚度为〜2μm。之后,在压电层下面对空腔进行湿法蚀刻,从而形成弯曲膜,总厚度约为13μm,空腔尺寸从0.056 mm 2 到0.181 mm 2 。然后将换能器极化,并用激光振动计测量其机电性能。分别在〜780-2000 kHz和70-135下测量膜的共振频率和品质因数,并在100-290 nm / V范围内测量有效d 33 系数。

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