Design and Performance of CPW and CPW Bandpass Filter on SOI Substrate

摘要

SOI technology gets more and more interests in RF ICs for its low loss,low crosstalk and other excellent electromagnetic properties.Well-behaved passive devices on SOI substrate will contribute a lot to the entire performance of RF ICs.In this paper,the influence of SOI parameters on transmission characteristics of coplanar waveguide (CPW) is researched by HFSS simulation.Based on the fine performance of a 50on CPW fabricated on an available SOI substrate,a dual-termination coupled Ka band bandpass filter (BPF) has been designed and fabricated.It shows -4.23dB insertion loss at peak transmission of about 32GHz.The CPW and BPF realized on SOI gain close characteristics respectively to the same structure on high resistivity (p≥1000Ω·cm) silicon substrate.SOI shows great potential to be the substrate of RF IC.