A Metal / Organic / Inorganic semiconductor heterostructure was built and characterized in situ under ultra-high vacuum conditions (UHV). The aim was to investigate the influence of a perylene-derivative organic thin film on the transport electronic properties of Schottky Ag / GaAs diodes. The device was studied using a combination of photoemission spectroscopy (PES) and electrical measurements. The obtained results were discussed using the analytical expressions of a trapped charge limited current (TCLC) model.
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