We propose herein that amorphous oxide semiconductor (AOS) superlattices, which can be deposited on various substrate including glasses or plastics without any substrate heating, are appropriate for the realization of superlattice thermoelectric devices. As an example, thermoelectric properties of AOS superlattices composed of a-In-Zn-O (well) and a-In-Ga-Zn-O (barrier) layers, fabricated on SiO_2 glass substrate by pulsed laser deposition at room temperature, were measured to clarify whether enhancement of Seebeck coefficient |S| occurs or not. The |S|_(2D) value increases drastically with decreasing a-In-Zn-O thickness (d_(IZO)) when the d_(IZO) is < ～5 nm, and reached 73 μV·K~(-1) (d_(IZO) = 0.3 nm), which is ～4 times larger than that of bulk |S|_(3D) (19 μV·K~(-1) ), while it kept high electrical conductivity, clearly demonstrating that the quantum size effect can be utilized in AOS superlattices.
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机译：我们在此提出，可以在没有任何衬底加热的情况下将其沉积在包括玻璃或塑料在内的各种衬底上的无定形氧化物半导体（AOS）超晶格适合于实现超晶格热电器件。例如，通过在室温下通过脉冲激光沉积在SiO_2玻璃基板上制备的由a-In-Zn-O（阱）和a-In-Ga-Zn-O（势垒）层组成的AOS超晶格的热电性质为进行测量以阐明是否提高塞贝克系数| S |是否发生。当d_（IZO）<〜5 nm时，| a | _（2D）值随着a-In-Zn-O厚度（d_（IZO））的减小而急剧增加，并达到73μV·K〜（-1） （d_（IZO）= 0.3 nm），是整体| S | _（3D）（19μV·K〜（-1））的〜4倍，同时保持了高电导率，清楚地表明了量子尺寸效应可用于AOS超晶格。
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