A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200μm,150μm and100μm-diameter , with the center spacings of 300μm and 250μm respectively. The maximum power is 880mW at acurrent of 4A, corresponding to 1KW/cm~2 average optical power density. The differential resistance is 0.09Ω. with a threshold of 0.56A. The novel array is compared with a 300um-aperture-size single device and a 4~*4 2-D array with 50um element aperture size and 250μm centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power, threshold current, lasing spectra, far-field distribution etc.
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