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A low-power subharmonic injection-locked oscillator using E/D-mode GaAs PHEMTs for Ka-band applications

机译:使用E / D模式GaAs PHEMT的低功率次谐波注入锁定振荡器,用于Ka频段应用

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A subharmonic injection-locked oscillator (SILO) implemented by using 0.5 mum E/D-mode PHEMT process is demonstrated to achieve a Ka-band low-power and low phase noise source in this paper. Based on a 15 GHz cross-coupled oscillator, a signal having the frequency around 30 GHz can be generated in this SILO circuit through the push-push technique. A cascode amplifier is also arranged to be the output buffer for gaining the output amplitude of 30 GHz signal. The total power consumption of SILO is 24.5 mW under 2.5 V supply voltage. The measured free-running phase noise is -101 dBc/Hz at 1 MHz offset. With injecting a 2nd-order sub-harmonic signal (7.5 GHz) into this ILO, the output phase noise can be further improved to -127 dBc/Hz. The overall frequency multiplication factor is 4.
机译:利用0.5um E / D模式的PHEMT工艺实现了亚谐波注入锁定振荡器(SILO),以实现Ka波段低功耗,低相位噪声源。基于15 GHz交叉耦合振荡器,可以通过推-推技术在此SILO电路中生成频率约为30 GHz的信号。共源共栅放大器也被设置为输出缓冲器,用于获得30 GHz信号的输出幅度。在2.5 V电源电压下,SILO的总功耗为24.5 mW。在1 MHz偏移处测得的自由运行相位噪声为-101 dBc / Hz。通过将二阶次谐波信号(7.5 GHz)注入此ILO,可以将输出相位噪声进一步提高至-127 dBc / Hz。总的倍频系数为4。

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