A low noise figure high linearity balanced amplifier module for cellular band base station's tower mounted amplifier application using E-mode pHEMT technology

摘要

This paper describes the design and realization of a low noise high linearity balanced amplifier module for cellular band tower mounted amplifier application using a proprietary 0.25um enhancement mode pseudomorphic high electron mobility transistor (EpHEMT) technology. The low noise balanced amplifier module exhibits a noise figure of 0.8dB across cellular band (0.8-1GHz) with gain (S₂₁) of 31dB on a single 5V supply and 2.8V control voltage while consuming 520mA of total current. 1 watt output power can be achieved in the balanced configuration with output third order intermodulation distortion (OIP3) of 46dBm. The two-stage balanced amplifier MMIC is designed in a chip size of 1.6 x 2.0 mm² and is housed in a miniature 5.0 x 6.0 x 1.1 mm³ 22-lead multiple-chip-on-board (MCOB) module.