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Qualification and Reliability of a GaN Process Platform

机译:GaN工艺平台的资格和可靠性

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摘要

In this paper, the qualification of a production GaN process platform is discussed. Details of the process repeatability, reliability and qualification methodologies are covered in detail. Additionally, concurrent product development efforts are also described. Reliability results include three-temperature DC testing that resulted in an activation energy of 2.0eV and DC-HTOL testing demonstrating 20-yr drift rates of less than 3% when operated at 150°C.
机译:在本文中,讨论了生产GaN工艺平台的资格。详细介绍了过程可重复性,可靠性和鉴定方法。另外,还描述了并发产品开发工作。可靠性结果包括三温度DC测试(产生2.0eV的激活能量)和DC-HTOL测试,表明在150°C下运行时20年漂移率小于3%。

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