Self-Seeding Injection of Anti-Reflection Coated FP Laser Amplifier Based Transmitters for Wavelength Division Multiplexing PON

摘要

We experimentally demonstrate a directly modulated 1% AR-FPLA based ONU under side-mode injection-locking for 1.25Gbits/s DWDM-PON application. With side-mode injection of this device, the characterizes of 34-channel detuning capacity under self seeding and its corresponding to a wavelength locking range of 30 nm is a potential candidate to achieve the cost effective and high capability 1.25 Gbits/s DWDM-PON systems. The effects of the front-facet reflectivity in the AR-FPLA on injection locking range, spontaneous emission, and Q-factor are interpreted from our results. A BER of < 10~(-12) is obtained for the nearest 17 channels and a 10~(-10) error rate can be achieved for all of the 34 injection-locked channels with SMSR > 35dB, providing a negative power penalty of-0.7dB.