The dynamic stress in micro-structures studied by Raman spectroscopy

摘要

Stress distribution is one of the main factors influencing the reliability of MEMS (Micro Electro Mechanical System) structure. In most cases, MEMS devices work in motion state, the dynamic stress often affects the performances of the MEMS devices. For the first time, dynamic streses were measured by means of Raman spectroscopy and high-frequency modulation technology, the measurement result shows that dynamic stress at a certain point in silicon micro-resonator is in agreement with the analysis of theory.