首页> 外文会议>Conference on Metrology, Inspection, and Process Control for Microlithography XXI pt.1 >Contact leakage and open monitoring with an advanced e-beam inspection system
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Contact leakage and open monitoring with an advanced e-beam inspection system

机译:使用先进的电子束检查系统进行触点泄漏和断路监控

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In this study, we used optimized negative mode to detect N+/P-well contact open and P+/N-well contact leakage. We found the optimized contact process condition to eliminate both contact open and leakage. Electron beam (e-beam) inspection results strongly correlate with die yield. We implemented negative mode e-beam defect inspection along with positive mode inspection for effective inline monitoring to accelerate the 65 nm process yield ramp.
机译:在这项研究中,我们使用优化的负模式来检测N + / P阱接触断开和P + / N阱接触泄漏。我们发现优化的接触过程条件可以消除接触断开和泄漏。电子束(电子束)检查结果与芯片成品率密切相关。我们实施了负模式电子束缺陷检查以及正模式检查,以进行有效的在线监测,以加快65 nm工艺的成品率。

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