Modelling the Thermal Coupling between Internal Power Semiconductor Dies of a Water-Cooled 3300V/1200A HiPak IGBT Module

摘要

Calculating the transient junction temperature of power semiconductors is important for analysing converter reliability or investigating short-term overload conditions. A dynamic thermal model, which includes the mutual thermal coupling of neighbouring dies and permits easy integration into a circuit simulator, is essential to perform such a task. In this paper, the thermal modelling procedure for a 3300V/1200A IGBT module based on numerical simulations and infrared temperature measurements is presented.