Accurate measurements of the I-V curves of crystalline silicon c-Si cells and modules are discussed. Special attention is paid to the recent high-efficiency devices. The effect of the sweep speed and direction on the I-V measurement of state-of-the-art high-efficiency c-Si cells and modules such as HIT and backside-contact technologies is investigated, in order to clarify the precise characterization techniques for those devices. The Pmax and FF of these devices with conversion efficiencies of ~20% show significant dependence on the sweep conditions by 5-10% or more, when the sweep speed is less than 50-100 msec.. Their I-V measurements should be carried out in the conditions where the result is independent on both the sweep direction and speed.
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