PREPARATION OF CHALCOPYRITE CuInSe2 THIN FILMS BY PULSE-PLATING ELECTRODEPOSITION AND ANNEALING TREATMENT

摘要

CuInSe2 (CIS) thin films have been prepared on molybdenum substrates by pulse-plating electrodeposition from an aqueous solution containing CuCl2, InCl3, SeO2 and Na-citrate. The most suitable pulse potential range for co-deposition is found to be -0.6~-0.75V vs the saturated calomel electrode (SCE) . The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDS). The influence of the square pulse potential on crystallinity, surface morphology and compositions has been studied. Chalcopyrite phase CuInSe2 films with smooth surfaces and stoichiometric composition have been obtained at a pulse potential of -0.65~-0.7V vs.SCE and annealing treatment.