SIMULATION AND OPTIMIZATION OF a-Si:H/c-Si HETERO-JUNCTION SOLAR CELLS

摘要

A-Si:H/c-Si hetero-junctions are attracting considerable interests due to their performance among HIT solar cells. Many advantages such as low temperature deposition leading to low-thermal budget, high open-circuit voltage values and less efficiency drop with increased operation temperature are observed in this structure. In this paper, the design and optimization of a-Si:H/c-Si hetero-junction devices utilizing a newly introduced numerical simulation program AFORS-HET v2.2 is demonstrated. A model of an TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells is built and fully simulated. Furthermore, as the solar cell performance critically depends on the a-Si:H/c-Si interface properties, the influence of the interface state density Nit on various characterization techniques is investigated. Additionally, an optimization of multi-dimensional parameter including layer thicknesse and doping concentration has been implemented to obtain the maximum solar cell efficiency.