Semiconducting iron disilicide (β-FeSi2) films are formed on Si(100) substrate from sputtered Fe/Si multilayer by thermal annealing. 60nm Fe single layer and [Fe 0.5 nm/ Si 1.6 nm]120 multilayer are first deposited onto high resistant Si(100) substrate and then annealed at 600 °C to 900°C for 2h or from 900°C to 1000°C for 10s. The samples are characterized by X-ray diffraction, Rutherford Back- scattering Spectroscopy, Atomic Force Microscope, optical absorption measurement and Van der Pauw method. (202)/(220) oriented β-FeSi2 films are fabricated according to XRD patterns. It is found that there is little redistribution of Fe and Si components in the films. It is also revealed by Atomic Force Microscope that multilayer structure could result in a smooth surface for β-FeSi2 films. Optical absorption spectra demonstrate that the film has a direct band gap of about 0.88 eV at room temperature. The hole concentration in annealed Fe/Si multilayer samples increases with temperature increasing from 300K to 430K.
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机译：通过热退火从溅射的Fe / Si多层膜在Si（100）衬底上形成半导体二硅化铁（β-FeSi2）膜。首先将60nm Fe单层和[Fe 0.5 nm / Si 1.6 nm] 120多层膜沉积到高电阻Si（100）衬底上，然后在600°C至900°C退火2h或从900°C至1000°C退火。 10多岁通过X射线衍射，卢瑟福反向散射光谱，原子力显微镜，光吸收测量和Van der Pauw方法对样品进行表征。根据XRD图制作（202）/（220）取向的β-FeSi2薄膜。发现在膜中几乎没有Fe和Si组分的再分布。原子力显微镜还表明，多层结构可以使β-FeSi2薄膜具有光滑的表面。光学吸收光谱表明，该膜在室温下具有约0.88 eV的直接带隙。随着温度从300K升高到430K，退火的Fe / Si多层样品中的空穴浓度增加。
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