Spin accumulation in ferromagneticonmagnetic devices

摘要

We have fabricated ferromagneticonmagnetic (FM/NM) metal heterojunctions for the detection of the spin accumulation effect in different nonmagnetic metals. The polycrystalline heterojunctions are prepared by high resolution electron beam lithography (HR-EBL) and a special oblique evaporation technique. The ferromagnetic (FM) and the nonmagnetic (NM) metal are evaporated on top of each other in a single evaporation process to achieve a clean interface between the two metals. The spin accumulation effect is detected in nonmagnetic copper (Cu) and aluminum (Al), from which we determine the polarization of the interface between the ferromagnetic and nonmagnetic metal.