Investigation of CuIn1-xAlxSe2 Thin Film for Solar Cells Prepared by a Selenization Process

摘要

CuInAl (CIA) films as precursors for CIAS were prepared using middle frequency A. C. magnetron sputtering and CIAS absorbers were obtained by selenization. SEM and XRD were used to observe and analyze the compositions, microstructures, and surface morphologies of the films. The results show that the CIAS absorber films with a Cu/(In + Al) atomic ratio of approaching 1 and an adjustable Al/(In + Al) ratio could be obtained by adjusting Al concentration in CIA precursors. CIAS obtained in the work is composed of Cu(In1-xAlx)Se2 phase. Al exists mainly in solid solution by substituting In.