A 700 V lateral power MOSFET with narrow gap double metal fieldplates realizing low on-resistance and long-term stability ofperformance

摘要

A 700 V lateral power MOSFET with a narrow gap double metal fieldplate structure is proposed. The MOSFET exhibits an improved specificon-resistance of 26 Ω mm² and achieves extremely stableperformance under long-term high-voltage operation. A power IC, whichintegrates the developed MOSFET using 1 μm CMOS process, hassuccessfully been applied to AC to DC converters in portable appliances