High performance NPN BJTs in standard CMOS process for GSM transceiver and DVB-H tuner

机译：用于GSM收发器和DVB-H调谐器的标准CMOS工艺的高性能NPN BJT

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We report a high performance NPN bipolar junction transistor (BJT) processed in standard CMOS process that is applied to realize the direct conversion GSM receiver and DVB-H tuner. Through the variation of the base doping profile, performance of the NPN

机译：我们报告了一种采用标准CMOS工艺处理的高性能NPN双极结晶体管（BJT），该晶体管用于实现直接转换GSM接收机和DVB-H调谐器。通过改变基础掺杂分布，NPN的性能

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《Radio Frequency Integrated Circuits Symposium (RFIC), 2006 IEEE》|2006年|P.4|共1页
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Jedon Kim; Hansu Oh; Chulho Chung; Joo-Hyun Jjeong; Hyunwoo Lee; Seok-Hee Hwang; In-Chul Hwang; Young-Jin Kim; Kyushik Hong; Eunseung Jung; Kwang-Pyuk Suh;
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1/f noise; bipolar transistors; cellular radio; digital video broadcasting; flicker noise; semiconductor device noise; transceivers; tuning; 1/f noise; 2.5 to 3.0 dB; 4.5 dB; 470 to 850 MHz; 64 dB; CMOS process; DVB-H tuner; GSM transceiver; NPN bipolar junction transis;

机译：1 / f噪声;双极晶体管;蜂窝无线电;数字视频广播;闪烁噪声;半导体器件噪声;收发器;调谐; 1 / f噪声; 2.5至3.0 dB; 4.5 dB; 470至850 MHz; 64 dB; CMOS工艺; DVB-H调谐器; GSM收发器; NPN双极结型晶体管;

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机译：利用寄生NPN BJT的CMOS低功耗带宽改进型导数叠加混频器
2. BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS [J] . Wang Bo, Law Man Kay, Bermak Amine, Electron Device Letters, IEEE . 2015,第11期

机译：利用标准CMOS中的基本复合电流进行BJT工艺扩散补偿
3. A comparative experimental investigation on responsivity and response speed of photo-diode and photo-BJT structures integrated in a low-cost standard CMOS process [J] . Katic Nikola, Schmid Alexandre, Leblebici Yusuf Microelectronics journal . 2015,第11期

机译：低成本标准CMOS工艺中集成的光电二极管和BJT结构的响应度和响应速度的对比实验研究
4. High performance NPN BJTs in standard CMOS process for GSM transceiver and DVB-H tuner [C] . Jedon Kim, Hansu Oh, Chulho Chung, Radio Frequency Integrated Circuits Symposium (RFIC), 2006 IEEE . 2006

机译：用于GSM收发器和DVB-H调谐器的标准CMOS工艺的高性能NPN BJT
5. 2GHz transmitter design based on 0.18 muM CMOS process and its linearization and 8 GHz transceiver design based on 0.25 muM silicon germanide bipolar process using GSML method. [D] . Lee, Jongsoo. 2008

机译：基于0.18μMCMOS工艺的2GHz发射机设计及其线性化，以及基于0.25μM锗硅双极工艺的8 GHz收发器设计（采用GSML方法）。
6. A Standard CMOS Humidity Sensor without Post-Processing [O] . Oleg Nizhnik, Kohei Higuchi, Kazusuke Maenaka 2011

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7. A quad-band low power single chip direct conversion CMOS transceiver with Σ∆modulation loop for GSM [O] . Edmund Götz, Hans Kröbel, Günter Märzinger, 2003

机译：具有用于GSM的ΣΔ调制环路的四频低功耗单芯片直接转换CMOS收发器

High performance NPN BJTs in standard CMOS process for GSM transceiver and DVB-H tuner

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