Novel Device structures for Sub-25nm Generation

摘要

Aggressive MOSFET scaling faces the challenges of limited Ion/loff ratio and severe short channel effects. The problems facing mixed mode circuits are equally daunting. While very high FTand Fmaxcan be realized, these small transistors have unacceptably low intrinsic gain (gmrO). Small supply voltage also posts real constraint in circuits. To overcome these problems, new device configurations made feasible by small dimensions and new materials need to be explored. In this paper, novel devices incorporating silicon and germanium are presented. These silicon and germanium based novel transistors with superior performance have the potential to alleviate the scaling challenges for sub-25nm nodes.