Modeling of charge and collector field in Si-based bipolar transistors

机译：硅基双极型晶体管的电荷和集电极场建模

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the field related transit time components. Comparison to device simulation results show good agreement.

机译：提出了双极晶体管集电极中与电压和电流有关的电场的解析公式。然后使用新的场表达式来计算基极-集电极耗尽电容和与场有关的渡越时间分量。与设备仿真结果的比较显示出良好的一致性。

著录项

来源
《NSTI(Nano Science and Technology Institute) Nanotechnology Conference and Trade Show(Nanotech 2004)》|2004年|P.102-107|共6页
会议地点
作者
H. Tran; M. Schroter;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类半导体技术;
关键词

相似文献

外文文献
中文文献
专利

1. The influence of collector designs on f_(max) versus f_t characteristics for different types of Si-based RF bipolar transistors [J] . Christian Schippel, Frank Schwierz, Jun Fu Semiconductor science and technology . 2007,第1期

机译：集电极设计对不同类型的基于Si的RF双极晶体管的f_（max）与f_t特性的影响
2. The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistors [J] . Christian Schippel, Jun Fu, Frank Schwierz Physica Status Solidi. C, Conferences and critical reviews . 2006,第3期

机译：集电极掺杂物分布对硅基射频双极晶体管的击穿电压和截止频率的影响
3. Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model [J] . de Graaff H.C., Kloosterman W.J. IEEE Transactions on Electron Devices . 1995,第2期

机译：在MEXTRAM模型中对双极型晶体管的集电极外延层进行建模
4. Modeling of charge and collector field in Si-based bipolar transistors [C] . H. Tran, M. Schroter NSTI Nanotechnology Conference and Trade Show . 2005

机译：基于SI基双极晶体管的充电和集电极场建模
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors [O] . Sufi Zafar, Minhua Lu, Ashish Jagtiani -1

机译：电化学传感器中场效应晶体管和双极结晶体管作为传感器的比较
7. Dead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistors [O] . Yang ES, Yan BP, Wang XQ 2001

机译：alGaas / InGaas p-n-p异质结双极晶体管集电极空间电荷区的死区效应

Modeling of charge and collector field in Si-based bipolar transistors

摘要

著录项

相似文献

相关主题

期刊订阅