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The determination of equivalent constriction resistance and film resistance by using low DC voltages

机译:使用低直流电压确定等效压缩电阻和薄膜电阻

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The change in a contact resistance due to the applied voltage is expressed by a formula, which indicates that this change is approximately proportional to the ratio of the constriction resistance to the film resistance in a series circuit model. It is possible to determine the equivalent values for the both these resistances by making use of the theory being presented and experimental data on the change in contact resistance. Experiments were conducted to measure the change in the contact resistances for cross wire contacts of Ag-Ag and Cu-Cu with a load of 0.1 to 1 N, when the contact voltage was decreased from /spl sim/15 mV to /spl sim/10 mV. It was found that the equivalent film resistance was about 70% of the total for high resistances (<1 /spl Omega/) and only 10 to 40% for low values (>0.01 /spl Omega/).
机译:由施加的电压引起的接触电阻的变化由公式表示,该公式指示该变化与串联电路模型中的收缩电阻与膜电阻的比率大致成比例。可以通过介绍的理论和接触电阻变化的实验数据来确定这两个电阻的等效值。当接触电压从/ spl sim / 15 mV降低到/ spl sim /时,进行了实验以测量负载为0.1到1 N的Ag-Ag和Cu-Cu的交叉线接触的接触电阻的变化。 10毫伏。发现对于高电阻(<1 / spl Omega /),等效膜电阻约为总电阻的70%,而对于低电阻(> 0.01 / spl Omega /),等效膜电阻仅为总电阻的10%至40%。

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