high electron mobility transistors; III-V semiconductors; 3G mobile communication; amplifiers; MOS integrated circuits; wide band gap semiconductors; radiofrequency amplifiers; code division multiple access; aluminium compounds; gallium compounds; high electron mobility transistors; 3G-wireless base station applications; state-of-the-art AlGaN-GaN HEMT; push-pull transmitter amplifier; digital pre-distortion system; channel leakage power ratio; 4-carrier W-CDMA signals; drain supply voltage; RF stress testing; drain bias voltage; LDMOS; 3G W-CDMA system; 250 W; 50 V; 1000 h; 60 V; AlGaN-GaN;
机译:硅以外的电源开关应用:SiC和GaN器件的现状和未来展望
机译:氧化锌:GaN的有吸引力的潜在替代品,应用和未来前景
机译:氧化锌:GaN的有吸引力的潜在替代品,应用和未来前景
机译:GaN HEMTS对基站应用的最近进展与未来前景
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:用多指架构调制对高功率应用的自终止蚀刻技术常关P-GAN / ALGAN / GAN HEMT的研究
机译:用于基站放大器的GaN HEMT技术