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Growth of graded SiGe films by novel UHV/CVD system

机译：通过新型UHV / CVD系统生长梯度SiGe膜

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Graded Ge fraction SiGe film was grown by using newly-designed SGE500 SiGe UHV/CVD system. The film quality was determined by X-ray diffraction. SiGe hetero-junction bipolar transistor (HBT) device with this SiGe film was made. Results showed that the quality of the graded SiGe film was high and the SiGe HBT device had good electrical performance.

机译：使用新设计的SGE500 SiGe UHV / CVD系统生长渐变的Ge分数SiGe薄膜。膜质量通过X射线衍射测定。用该SiGe膜制作了SiGe异质结双极晶体管（HBT）器件。结果表明，梯度SiGe薄膜的质量较高，并且SiGe HBT器件具有良好的电性能。

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《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on 》|2004年|p.281-284|共4页
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作者
Wentao Huang; Changchun Chen; Xiaoyi Xiong; Zhihong Liu; Wei Zhang; Pei-hsin Tsien;
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中图分类无线电电子学、电信技术 ;
关键词
Ge-Si alloys; chemical vapour deposition; semiconductor epitaxial layers; semiconductor growth; rapid thermal processing; X-ray diffraction; vapour phase epitaxial growth; heterojunction bipolar transistors; graded fraction film growth; ultrahigh vacuum CVD system; X-ray diffraction; heterojunction bipolar transistor; film quality; single-wafer; electrical performance; infrared rapid-thermal process; epitaxial wafer; output characteristic; SiGe;

机译：锗硅合金;化学气相沉积;半导体外延层;半导体生长;快速热处理; X射线衍射;气相外延生长;异质结双极晶体管;梯度分数薄膜生长;超高真空CVD系统; X射线衍射;异质结双极晶体管;薄膜质量;单晶片;电性能;红外快速热处理;外延晶片;输出特性; SiGe;

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专利

1. Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System [J] . Wentao Huang, Changchun Chen, Xiyou Li Metals and Materials International . 2004 ,第5期

机译：使用单晶片快速热处理UHV / CVD系统生长SiGe膜
2. Growth of SiGe Films by Cold -- wall UHV/CVD Using GeH_4 and Si_2H_6 [J] . CHENG Bu - wen, LI Dai - zong, HUANG Chang - jun Semiconductor photonics and technology . 2000 ,第3期

机译：用GeH_4和Si_2H_6冷壁UHV / CVD生长SiGe薄膜。
3. SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion [J] . L.-E. Wernersson, S. Kabeer, V Zela, Electronics Letters . 2004 ,第1期

机译：通过UHV-CVD生长和邻近快速热扩散制造的SiGe Esaki隧道二极管
4. Growth of graded SiGe films by novel UHV/CVD system [C] . Wentao Huang, Changchun Chen, Xiaoyi Xiong, International Workshop on Junction Technology . 2004

机译：通过新型UHV / CVD系统生长分级SiGe薄膜
5. Hydrogenated microcrystalline silicon thin film growth in the DC saddle field PECVD system. [D] . Johnson, Erik Verne. 2006

机译：在直流鞍场PECVD系统中氢化微晶硅薄膜的生长。
6. Micropatterning of TiO2 Thin Films by MOCVD and Study of Their Growth Tendency [O] . Ki-Hwan Hwang, Byung-Chang Kang, Duk Young Jung, -1

机译：TiO2薄膜的MOCVD微图案化及其生长趋势的研究
7. Growth and characterization of UHV/CVD SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates [O] . Sheng, S. R., Dion, M., McAlister, S. P., 2002

机译：在块状单晶SiGe和Si衬底上的UHV / CVD SiGe外延层的生长和表征

Growth of graded SiGe films by novel UHV/CVD system

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