Electrical and optical properties of silicon quantum dots light-emitting diode by using highly doped ZnO

摘要

A light emitting diode (LED) with transparent doping layer (TDL) is fabricated. The I-V characteristics and the electroluminescence intensity of a LED with TDL significantly increase more than that of a LED without TDL. The improvement of optical and electrical properties is attributed to the excellent carrier injection through the n-ZnO layer into Si quantum dots embedded in silicon nitride film and the reduction of the electrical contact resistance with n-ZnO layer between metal and silicon nitride film.