首页> 外文会议>Smart Sensors, Actuators, and MEMS >Monolithic Ⅲ-Ⅴ and Hybrid Polysilicon-Ⅲ-Ⅴ Microelectromechanical Tunable Multilayer Filters and Vertical Cavity Surface Emitting Lasers
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Monolithic Ⅲ-Ⅴ and Hybrid Polysilicon-Ⅲ-Ⅴ Microelectromechanical Tunable Multilayer Filters and Vertical Cavity Surface Emitting Lasers

机译:整体式Ⅲ-Ⅴ和杂化多晶硅Ⅲ-Ⅴ型微机电可调多层滤光片和垂直腔面发射激光器

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We report our progress on the design and fabrication of electrostatically-actuated microelectromechanical (MEM) tunable wavelength filters and vertical cavity surface-emitting lasers (VCSELs). We investigate both an all-semiconductor monolithic approach and a hybrid approach based on the combination of conventional polysilicon microelectromechanical systems (MEMS) and Ⅲ-Ⅴ semiconductor thin-film distributed Bragg reflector (DBR) and VCSEL structures. In the tunable hybrid structures the Ⅲ-Ⅴ semiconductor layers are flip-bonded onto specially designed polysilicon foundry MEMS structures and separated from their lattice-matched parent substrates by a novel post-bonding lift-off process.
机译:我们报告了在静电驱动微机电(MEM)可调波长滤光片和垂直腔表面发射激光器(VCSEL)的设计和制造方面的进展。我们研究了全半导体单片方法和基于常规多晶硅微机电系统(MEMS)与Ⅲ-Ⅴ型半导体薄膜分布式布拉格反射器(DBR)和VCSEL结构的组合的混合方法。在可调混合结构中,将Ⅲ-Ⅴ半导体层倒装键合到专门设计的多晶硅铸造MEMS结构上,并通过新颖的键合后剥离工艺将其与晶格匹配的母体衬底分离。

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