CMOS integrated circuits; integrated circuit design; circuit simulation; low-power electronics; high-speed integrated circuits; integrated circuit testing; CMOS low power high speed I/O interfaces; CMOS design; CMOS technology; differential signaling input/output interface; signal transmission swings; prototype chip; data rate; Cadence Spectre post-layout simulations; performance comparisons; signaling technologies; 0.18 micron; 1.8 V; 10 mA; 4 Gbit/s;
机译:采用0.18 / spl mu / m CMOS的5.7 GHz低功率可变增益LNA
机译:具有可靠失调消除方法的超高速高分辨率低失调低功耗电压比较器,适用于0.18 AμmCMOS技术中的高性能应用
机译:5.8 GHz CMOS T / R开关具有0.18- / spl mu / m CMOS工艺的高和低衬底电阻
机译:在0.25- / spl mu / m和0.18- / spl mu / m的2 GHz频率下的低噪声放大器比较RF-CMOS和SiGe BiCMOS
机译:CMOS中高性能MMWAVE电路和低功耗低抖动高速接口电路
机译:0.18 µm CMOS工艺中的高速,低偏移动态锁存比较器的设计
机译:采用0.18- / spl mu / m CMOS的5.2-GHz RF功率采集器,用于植入式眼压监测