The application one-dimensional and quasi one-dimensional Thomas-Fermi equation for the modelling of an intra-atomic potential in the ultrathin gate dielectric

摘要

The statement of the one-dimensional Thomas-Fermi equation is considered. Its analytical solution is obtained. The procedure of adaptation of a solution of the three-dimensional Thomas-Fermi equation for an one-dimensional case is offered in connection with a problem of tunneling of charge carriers through ultrathin gate dielectric.