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The Design of a Cost Effective Multi Wavelength Development Rate Monitoring Tool

机译:具有成本效益的多波长发展速率监测工具的设计

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Understanding the development rate of resists is critical for the characterization of photoresist formulations and accurate modeling of the photolithographic process. Most commercial development rate monitors (DRMs) are based on the optical interference of a single wavelength of light. (Perkin-Elmer DRM5800; Litho-tech Japan RDA-790). DRMs based on the interference across a broad spectrum of wavelengths, known as multi wavelength DRMs (MW-DRM), were first reported by Konnerth and have also been used for photolithographic research. This technique has been applied to commercial DRMs (SC Technology Inspector), but the high cost of these tools has made them inaccessible to most research and development facilities. This paper describes the development of a new cost-effective, scaleable, multi-channel DRM that allows collection and calculation of multiple development rate curves using MW-DRM technology. Techniques are presented for collection of multi wavelength data at rates exceeding 80 Hz, which in turn allows the study of photoresists that develop at rates in excess of 5 microns per second. The algorithms necessary to analyze this data are presented. The use of these algorithms for the extraction of development rate curves is demonstrated with resists that exhibit surface inhibition and standing waves. The use of multi-layer algorithms to collect development rate information in films between 0 and 200 nm thick is also shown. Finally, the use of these techniques for characterization of deprotection in chemically amplified photoresists, is presented.
机译:理解抗蚀剂的开发速率对于光刻剂配方的表征和光刻过程的精确建模至关重要。大多数商业开发速率监测器(DRM)基于单一波长光的光学干扰。 (Perkin-Elmer DRM5800; Litho-Tech Japan RDA-790)。基于跨越广谱波长的干扰的DRM,称为多波长DRM(MW-DRM),首先通过Konnerth报道,并且还被用于光刻研究。该技术已应用于商业DRMS(SC技术检查员),但这些工具的高成本使它们无法进入大多数研究和开发设施。本文介绍了一种新的成本效益,可扩展,多通道DRM的开发,允许使用MW-DRM技术进行多种开发速率曲线的收集和计算。提出了在超过80Hz的速率下集合多波长数据的技术,这又允许研究以超过每秒5微米的速率产生的光致抗蚀剂。介绍了分析该数据所需的算法。使用这些算法来提取开发速率曲线的抵抗力,抗蚀剂表现出表面抑制和驻波。还示出了使用多层算法来收集0至200nm厚的薄膜中的开发速率信息。最后,介绍了使用这些技术来表征化学扩增的光致抗蚀剂中的脱保护。

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