The mechanical polishing of the semiconductors wafers processed in the microelectronic industry induces particulate contamination. Also a cleaning step is always required to remove the residual particles hardly stuck on the surfaces and which can cause damage and defects in the successive deposited layers. However, some particles embedded on the surface by polishing are very difficult to remove by a simple rinse with DI water. Several cleaning procedures are available for semiconductor substrates but among them, the chemical one is the simplest and easiest to control. Many techniques are used and reported on the silicon wafers cleaning but they are less developed on GaAs surfaces. A number of experiments and models are developed to understand and better describe the adhesion mechanisms between spherical particles and a flat surface.
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