首页> 外文会议>Electrical Insulation and Dielectric Phenomena, 2002 Annual Report Conference on >Increased cell killing and DNA damage in cells exposed to ultra-short pulsed electric fields
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Increased cell killing and DNA damage in cells exposed to ultra-short pulsed electric fields

机译:暴露于超短脉冲电场的细胞中增加的细胞杀伤和DNA损伤

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We investigated the effects of nanosecond pulsed electric fields (nsPEF) on DNA structure and on survival of two human leukemia cell lines (Jurkat and HL60) in vitro. DNA damage was evaluated using single cell gel electrophoresis methods (comet assay) and sensitivity of cells to nsPEF determined by clonogenic cell survival. nsPEF applications using pulse durations of 10, 60 or 300 nanosecond duration with voltage amplitudes of 300, 60 and 60kv/cm respectively were applied to cells in trains of 1, 5, or 10 pulses. Jurkat and HL60 cells both showed DNA damage following exposure to different nsPEF parameters. Comet length increased in Jurkat cells by 22.5% at one, 33.2% at five and 62% at ten 60ns pulses compared to non-exposed cells. HL60 showed increases in comet length of 28.6%. 23.5% and 41.2% after one pulse of 10, 60 and 300ns duration, respectively. Cell survival curves for both cell types showed a decrease (90+/-4%) in cell survival following one 60 or 300ns pulse. A further dramatic decrease in cell survival was not observed following 5 and 10 pulses. These data show that exposure to nsPEF applications induces DNA damage and decreases cell survival in vitro.
机译:我们研究了纳秒脉冲电场(nsPEF)对DNA结构和两种人白血病细胞系(Jurkat和HL60)存活的影响。使用单细胞凝胶电泳方法(彗星分析)评估DNA损伤,并通过克隆细胞存活率确定细胞对nsPEF的敏感性。使用10、60或300纳秒持续时间,电压幅度分别为300、60和60kv / cm的nsPEF应用程序应用于1、5或10个脉冲序列中的单元。暴露于不同的nsPEF参数后,Jurkat和HL60细胞均显示出DNA损伤。与未暴露的细胞相比,Jurkat细胞在1个60ns脉冲时彗星长度增加了22.5%,在5个脉冲处增加了33.2%,在5个脉冲处增加了62%。 HL60的彗星长度增加了28.6%。持续时间为10、60和300ns的一个脉冲后分别达到23.5%和41.2%。两种细胞类型的细胞存活曲线显示,在60或300ns脉冲后,细胞存活率降低了(90 +/- 4%)。 5和10个脉冲后未观察到细胞存活率的进一步显着降低。这些数据表明,暴露于nsPEF应用会导致DNA损伤并降低体外细胞存活率。

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