Electrothermal simulations of SiC GTO thyristors containing gate and drift regions of the same or opposite polarity in a clamped inductive-load circuit

摘要

Two-dimensional electrothermal simulations were done for various silicon carbide (SiC) gate turn-off (GTO) thyristor structures to increase their reliability when used in power conversion circuits for electric motor drive. Accurate high-temperature models to represent 4H-SiC bulk properties were included. The influences of having the gates on a region of the same or opposite polarity as the drift region and thermal resistance of the package are discussed.