The design of CMOS real-time motion-direction detection chip with BJT-based silicon-retina sensors and correlation-based motion detection algorithm

摘要

In this paper, a new CMOS real-time motion-direction detector using the bipolar junction transistor (BJT)-based silicon retina is proposed and implemented. In the proposed design, a correlation-based algorithm is adopted to determine the motion direction of the object image projected on the chip, while the BJT-based silicon retina is adopted to enhance the capability of image acquisition and edge-extraction preprocessing. An experimental chip consisting of a 32/spl times/32 pixel array and peripheral arithmetic units is designed and fabricated using a 0.5 /spl mu/m single-poly-triple-metal CMOS process. The pixel size is 100/spl times/100 /spl mu/m/sup 2/ with a fill factor of 11.6%, while the total chip area is 4200/spl times/4000 /spl mu/m/sup 2/. The measurement results have verified the correct function of the fabricated chip. The measured optical dynamic range is 82 dB, the supply voltage is 5 V and the power consumption is 120 mW.