Composition of ideal C-V curves for ultrathin gate dielectrics based on experimental determination of substrate surface capacitance and potential

摘要

We propose a new method to compose ideal C-V curves for ultrathin gate dielectrics based on experimental determination of substrate surface capacitance and potential. We also demonstrate its effectiveness in extracting equivalent oxide thickness (EOT) and interface state density in high-k dielectric materials. The proposed method can be applied to ultrathin gate dielectrics where the classical analytical model for ideal C-V curves is invalid.