首页> 外文会议>Electrical Insulating Materials, 2001. (ISEIM 2001). Proceedings of 2001 International Symposium on >Influences of barrier height and space charge on DC breakdown in BaTiO/sub 3/-based ceramic capacitors
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Influences of barrier height and space charge on DC breakdown in BaTiO/sub 3/-based ceramic capacitors

机译:势垒高度和空间电荷对BaTiO / sub 3 /基陶瓷电容器直流击穿的影响

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DC breakdown in BaTiO/sub 3/-based multilayer ceramic capacitors (MLCs) was studied. An abnormal depressed dc breakdown region near the Curie temperature of BaTiO/sub 3/ was observed. It was found that the crystal microstructure of BaTiO/sub 3/-based ceramic in Curie temperature region transformed from the ferroelectric tetragonal phase to the paraelectric cubic phase while the barrier height increases. We assumed the increasing barrier height become a resistance of electrons injecting into the interface at a lower electrical field, and results in a large number of electrons transiently inject into the interface at a higher field, which causes severe transient electronic thermal breakdown and electromechanical breakdown in Curie temperature. That provides high dc breakdown probability in Curie temperature region, which results in an abnormal low dc breakdown field.
机译:研究了基于BaTiO / sub 3 /的多层陶瓷电容器(MLC)的直流击穿。在BaTiO / sub 3 /的居里温度附近观察到异常的直流击穿区。发现在居里温度范围内BaTiO / sub 3 /基陶瓷的晶体结构从铁电四方相转变为顺电立方相,同时势垒高度增加。我们假设增加的势垒高度成为在较低电场下注入界面的电子的阻力,并导致大量电子在较高电场下瞬时注入界面,从而导致严重的瞬态电子热击穿和机电击穿。居里温度。这在居里温度范围内提供高的直流击穿概率,从而导致异常的低直流击穿场。

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