Behavior of Current Under DC Field and Switching, Current Controlled Negative Resistance and Oscillation on MOM Device of Bi_2O_3 Film

摘要

By using the MOM device of Bi_2O_3 films, some electrical properties on these films or the device are studied as follows; (1) The behavior of the electric current across the thick Bi_2O_3 films under DC field, is elucidated by the formula I propor.toV~n for the regions of low (n<1), ohmic (n=1), high (n>2) conductivities and SCLC (n>=1.5approx2). A hysteresis of the I-V curve results from the residual space charge and polarization in the device. (2) The memory switching and oscillation (in CCNR) phnomena on the device of thin Bi_2O_3 films are observed under the AC applied voltage in the room temperature and 77K. These rest upon a thermal effect due to the current injection to the device.