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A new technique for the hydrogenation of silicon tetrachloride

机译:四氯化硅加氢的新技术

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During the manufacture of semiconductor polycrystalline silicon, large quantities of Silicon Tetrachloride are produced as by-product, which increase the consumption of the raw materials and energy, and cause environmental pollution. In this paper, a new technique for hydrogenation of Silicon Tetrachloride has been developed. In the temperature range from 400 to 500 deg C, the pressure range from 1.3 to 1.5 MPa and the presence of catalyst, hydrogen and metallurgical grade silicon powder, Silicon Tetrachloride is converted into Trichlorosilane. After condensation process and separation process, Trichlorosilane can be reduced to polysilicon directly by hydrogen. The quality of reduced production is better than that of synthetic method. The direct conversion rate of Silicon Tetrachloride is above 25
机译:在制造半导体多晶硅的过程中,会大量产生副产品四氯化硅,这会增加原材料和能源的消耗,并造成环境污染。本文开发了一种新的四氯化硅加氢技术。在400至500摄氏度的温度范围,1.3至1.5 MPa的压力范围以及催化剂,氢气和冶金级硅粉的存在下,四氯化硅被转化为三氯硅烷。经过缩合和分离过程后,三氯硅烷可以直接被氢还原为多晶硅。减产的质量优于合成方法。四氯化硅的直接转化率高于25

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