Liner-supported cylinder (LSC) technology to realize Ru/Ta/sub 2/O/sub 5//Ru capacitor for future DRAMs

机译：内衬支撑圆柱（LSC）技术可为将来的DRAM实现Ru / Ta / sub 2 / O / sub 5 // Ru电容器

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The concept of liner-supported cylinder (LSC) technology to realize robust formation of cylindrical electrodes with Ru, which has advantages to bring out the best of Ta/sub 2/O/sub 5/ performance, is described. With experimental results including DRAM functionality, we show that LSC-Ta/sub 2/O/sub 5/ capacitor is a promising candidate to realize 0.10 /spl mu/m DRAMs and beyond.

机译：描述了实现具有Ru的圆柱形电极的稳健成形的衬里支撑圆柱体（LSC）技术的概念，该技术具有发挥Ta / sub 2 / O / sub 5 /最佳性能的优点。通过包括DRAM功能在内的实验结果，我们证明LSC-Ta / sub 2 / O / sub 5 /电容器是实现0.10 / spl mu / m DRAM及更高容量的有希望的候选者。

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《Electron Devices Meeting, 2000. IEDM Technical Digest. International》|2000年|P.793-796|共4页
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Fukuzumi; Y.; Suzuki; T.;
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中图分类无线电电子学、电信技术;
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Liner-supported cylinder (LSC) technology to realize Ru/Ta/sub 2/O/sub 5//Ru capacitor for future DRAMs

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