首页> 外文会议>Electrical overstrees/electrostatic discharge symposium >A study of head stack assembly sensitivity to ESD
【24h】

A study of head stack assembly sensitivity to ESD

机译:磁头堆叠组件对ESD的敏感性研究

获取原文

摘要

It is well known that both GMR and MR head gimbal assemblies (HGAs) are susceptible to damage by electrostatic discharge (ESD) from Human Body Model (HBM) and Machine Model (MM) transients. What is less well known is the susceptibility of a GMR or MR sensor once the HGA has been wired to the pre-amp and becomes part of an HSA (head stack assembly). We measured current transients across a current probe at the nead position generated by applying an HBM voltage transient at the actuator body, flex or pins. The measured amplitude transfer function (Ma through head vs. HBM voltage) through this particular presamp/head stack assembly was about lmA/33V. The determination of damage thresholds for HSAs is essential to determine the level of ESD controls needed for post-HSA manufacturing processes in the production of hard disk drives.
机译:众所周知,GMR和MR磁头万向架组件(HGA)都容易受到人体模型(HBM)和机器模型(MM)瞬变引起的静电放电(ESD)的损坏。一旦将HGA连接到前置放大器并成为HSA(磁头堆栈组件)的一部分,就不太可能知道GMR或MR传感器的敏感性。我们测量了在执行机构主体,挠性件或销上施加HBM电压瞬变而在正常位置产生的跨过电流探头的电流瞬变。通过该特定的前置放大器/磁头堆栈组件测得的振幅传递函数(通过磁头的Ma相对于HBM电压)约为1mA / 33V。确定HSA的损坏阈值对于确定硬盘驱动器生产中的HSA后制造流程所需的ESD控制级别至关重要。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号