Super-high-power operation of 0.98-um InGaAs(P) /InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers

摘要

Abstract: Record high powers of 16.8 W and 23.5 W have been obtained at CW and Quasi-CW (QCW) operation of 200 micrometer-aperture Al- free broad waveguide 0.98 micrometer SCH QW InGaAs(P)/InGaP/GaAs lasers. Some new features of diode laser operation at the super high power regime are considered. Non- thermal, purely current-induced mechanism of power saturation decreases the output powers at P greater than 14 W. Influence of thermal-induced power saturation at high CW currents can be reduced by the stabilization of active region temperature. The main portion (approximately 70%) of active region overheating is associated with a temperature gradient in the copper heatsink. The computed temperature distribution across device is in a good agreement with the spectral and direct measurements of the diode laser temperature. Life-testing at an output power level of 6 W CW and 45 degrees Celsius has shown only about 6% degradation after more than 1200 hours of operation. !9