Structural characterization and crystallization process of nanostructured silicon thin films produced in low-pressure silane plasma

摘要

Nanostructred silicon thin films (ns-Si:H),consisting of a two-phase mxture of amorphous and ordered material,were obtained by plasma-enhanced chemical vapor eposition (PECVD) under a wide rane of plasma ocnditiosn.The key to embedding Si-ordered particles in the amorphous Si matrix was the formaiton of silicon clusters in the gas phase (diameter < 2nm) under conditions of plasma polymerization,and their incorpotration into the growing films.