Co-silicide formation on silicon FEAs from Co, Co/Ti and Ti/Co layers

摘要

For enhancement and stabilization of electron emission, Co-silicides were formed from Co, Co/Ti and Ti/Co layers on silicon FEAs. The uniform and smooth Co-silicide layer can be obtained by depositing Co and Ti on silicon tips in order and rapid annealing. Best results were yielded from Ti/Co bi-layer, because Ti prevents oxygen adsorption on the Co film during silicidation. Compared with pure silicon field emitters, the silicide FEAs formed from Ti/Co layer exhibited a significant improvement in maximum emission current, stability and failure voltage.