Mid-IR type-II interband cascade lasers based on InAs/GaInSb heterostructures

摘要

In this work, we present recent results demonstrating interband cascade lasers (ICLs) at wavelengths near 4 microns. Three different MBE growths, on different vendor substrates, have led to ICL devices with good structural quality and good laser performance. For example, we observed peak output powers exceeding 4 W/facet at 80 K, pulsed operation up to 217 K cw operation at 70 K, and differential quantum efficiencies exceeding 450%.