Sikicon diode temperatue sensor with nearly linear response curve down to helium temperatures

摘要

By means of increase in doping level of thermodiode base the silicon temperature p~(++) n~+-type sensors have been got which response curves do not exhibit anomalously steep sections in cryogenic temperature region. High doping did not w orsen their sensitivity. Temperature response curves for thermodiodes with high doping levels point to effect of band gap narrowing in diode material.