Evaluation of hydrogen sensitivity and measuring range of integrated MISFET sensors by means of testing the electriucal characteritics of sensing elements

摘要

Integrated hydrogen sensors based on Pd-Ta_2O_5-SiO_2-Si structure and consisting of MISFET, thermoidode, heater and test elements have been developed and investigated. There has been found the relationships between the electrical characterics such as the threshold voltage, transoconductance etc. of hydrogen sensitive MISFET and the measuring characteristics of integrated sensor based on this MISFET. This alows to except the hydrogren testing stages from the finish testing processes and to use only conventional IC'electrical tests.