Chemically grafted field effect transistors for the detection of potassium ions

摘要

K~+ISFETs are prepared by grafting silylated corwn-ether molecules which are first syntherized. Three grafting reactions are used. The resonses of the grafed ISFETs are sub-nernstian. They are analyzed through the modified site-binding model and the desity of grafted sites was found to be equal to 6x10~(12) cm~(-2) with the dimethylamino-solylated molecule, the complexation constant of K~+ ions being found to be equal to 10~(2.5).