This paper describes new approach to modellingpiezoresistive properties of polycrystalline semiconductors. The model combines the electro-physical properties of microcrystalline silicon films with that of monocrystalline silicon in the way that the former properties are attributed to the grain boundaries regions whereas the latter-to intragrain regions. The model is used to describe the dpeendence of gausge factor (GF) and its temperature coefficient (TCGFV) of the higyly boron doped polycrystalline silicon, 4.10~(25)... 10~(27) m~(-3), on the dopant concentration for diffeent grain sizes, 10~(-8)...10~(-6) m. It is concluded that for very high dopijg level the zero or even positive TCGF can be otained.
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